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The BCR555E6433HTMA1 is a PNP silicon digital transistor manufactured by Infineon Technologies. It integrates a single bipolar junction transistor with internal biasing resistors in a compact SOT-23-3 surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Internal resistance values include a typical base resistor of 2.2 kOhms and an emitter resistor of 47 kOhms, yielding a specific resistance ratio. The component supports a maximum power dissipation of 330 mW and operates within a temperature range from -55 C to +150 C.
Verify the exact suffix E6433HTMA1 against official Infineon documentation to confirm lead time and availability status. Confirm RoHS compliance details directly with the manufacturer or authorized distributors before procurement. Ensure storage conditions meet specified moisture sensitivity levels. Check for any recent product discontinuation notices or lifecycle changes prior to finalizing orders.
Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Verify that the 50 V voltage rating and 100 mA current capacity align with the target application's electrical requirements. Consider the thermal performance and power dissipation limits relative to the expected operating environment and ambient temperatures.
This part belongs to the BCR series of digital transistors, which combine transistors and resistors in a single package. The E6433HTMA1 designation indicates a specific tape-and-reel packaging configuration suitable for automated assembly processes. It serves as a discrete solution for replacing multiple discrete components in switching and amplification roles.
Consult official Infineon cross-reference lists for verified substitutes. Generic equivalents may differ in internal resistor tolerances or hFE characteristics. Validate pinout compatibility and thermal performance before substituting.