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The BCR562E6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in an SOT-23 package. It integrates built-in bias resistors with typical values of R1=4.7 kΩ and R2=4.7 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW at temperatures up to 79 °C. The device features a minimum DC current gain (hFE) of 60 at IC=50 mA and operates within a junction temperature range of -65 °C to 150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific E6327 ordering suffix matches project requirements, as it denotes the tape and reel packaging format. Ensure compliance with RoHS directives and AEC-Q101 qualification standards relevant to the intended deployment environment.
Select this component when a compact PNP solution with integrated biasing is required. The SOT-23 form factor suits space-constrained designs. Verify that the 50 V voltage rating and 500 mA current capacity align with load specifications. Consider the thermal resistance characteristics if operating near maximum power dissipation limits.
This part belongs to the BCR562 series of PNP digital transistors. The E6327 suffix indicates the specific packaging configuration used by Infineon for mass production distribution. It serves as a direct replacement for discrete resistor-transistor networks in switching applications.
Check datasheets for alternative PNP digital transistors with similar VCEO ratings and integrated resistor ratios. Ensure pinout compatibility and thermal performance match the original design constraints before substitution.