BCR573E6433HTMA1

$0.04

Description：TRANS PREBIAS PNP 50V SOT23
Series：-

SKU:8ed1e9905208 Category: Single, Pre-Biased Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：1 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：150 MHz
Power - Max：330 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23

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BCR573E6433HTMA1

Overview

The BCR573E6433HTMA1 is a PNP silicon digital transistor manufactured by Infineon Technologies. It features an integrated base resistor network for simplified circuit design. The device operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 500 mA. Key electrical parameters include a minimum DC current gain (hFE) of 100, a typical input resistance of 4.7 kOhms, and a power dissipation rating of 330 mW. The component is housed in a surface-mount SOT-23-3 package and is qualified to AEC-Q100 standards for automotive applications.

Feature Summary

Integrated pre-biased PNP structure with internal base resistors
Automotive-grade reliability compliant with AEC-Q100 standards
High current handling capability up to 500 mA
Compact SOT-23-3 surface-mount packaging

Applications

Automotive load switching circuits
General-purpose switching applications
Interface logic level translation
Driver stages for relays and solenoids

Procurement Notes

Verify the specific ordering suffix E6433HTMA1 against official Infineon documentation to confirm the exact tape-and-reel quantity and manufacturing date code. Confirm that the AEC-Q100 qualification status remains valid for the target application environment. Check for any recent lifecycle notices regarding obsolescence or last-time buy dates from the manufacturer.

Selection Notes

Select this component when a high-current PNP digital transistor is required for space-constrained designs. Ensure the application voltage does not exceed the 50 V limit and that the thermal management strategy accommodates the 330 mW power dissipation. Verify that the integrated base resistance values align with the driving source impedance requirements.

Part Context

This part belongs to the BCR series of pre-biased transistors from Infineon Technologies. These devices combine bipolar junction transistors with internal bias resistors to reduce board space and assembly costs. The BCR573 variant specifically targets higher current applications compared to lower-power counterparts in the same family.