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The BCR583E6327HTSA1 is a PNP silicon digital transistor manufactured by Infineon Technologies. It features a single configuration housed in an SOT-23-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. The device incorporates a typical input resistor of 10 kΩ with a typical resistance ratio of 1. It meets AEC-Q100 automotive qualification standards, operates within a temperature range of -65 °C to +150 °C, and has a minimum DC collector/base gain (hFE) of 70.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm that the component status remains active or managed for long-term supply if required for production. Ensure compatibility with existing PCB footprints and soldering profiles during integration planning.
Select this component when a PNP digital transistor with integrated biasing resistors is required for space-constrained designs. The SOT-23-3 package offers a compact solution for high-density boards. Consider the 50 V voltage rating and 500 mA current capability to ensure adequate headroom for the intended load conditions.
This part belongs to the BCR series of silicon digital transistors from Infineon Technologies. These devices combine bipolar junction transistors with internal biasing resistors to reduce external component count. The E6327HTSA1 suffix indicates specific manufacturing and packaging details defined by the original equipment manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter equivalence before considering any alternative components from other manufacturers.