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The BCV47TA is a single NPN Darlington transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23 surface-mount package with three terminals. The device features a collector-emitter breakdown voltage of 60 V and supports a maximum continuous collector current of 500 mA. Key electrical characteristics include a transition frequency of 170 MHz, a DC current gain of at least 10,000 at 100 mA and 5 V, and a collector cutoff current of 100 nA. It operates within a temperature range of -55°C to 150°C TJ.
Verify the specific suffix TA against official Diodes Incorporated documentation to confirm tape-and-reel packaging and binning specifications. Ensure the component meets required automotive quality standards if used in qualified systems. Cross-reference datasheet parameters such as hFE ranges and thermal resistance with design requirements before finalizing procurement.
Select this component when a high-gain NPN Darlington configuration is required in a compact SOT-23 package. Consider its 60 V collector-emitter voltage rating and 500 mA current capacity relative to load demands. Evaluate the 170 MHz transition frequency for suitability in the intended signal bandwidth. Confirm AEC-Q101 compliance is necessary for the target application environment.
The BCV47TA belongs to the BCV47 series of single NPN Darlington transistors produced by Diodes Incorporated. This series is designed for general-purpose applications requiring high current gain in small packages. The TA suffix typically denotes specific packaging and handling configurations consistent with the manufacturer's standard product line offerings.
BCV47QTC is documented as a parameter-equivalent alternative.