BCV61CE6327HTSA1

Overview

The BCV61CE6327HTSA1 is an NPN silicon double bipolar junction transistor manufactured by Infineon Technologies. It features a SOT-143-4 surface-mount package and holds AEC-Q100 automotive qualification. Key electrical parameters include a maximum collector-emitter voltage of 30 V, a maximum collector-base voltage of 30 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 300 mW. It exhibits a gain-bandwidth product of 250 MHz and a DC current gain ranging from 420 to 800. Operating temperatures span from -65°C to +150°C.

Feature Summary

• Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in demanding environments.
• Dual NPN configuration within a compact SOT-143-4 package designed for efficient space-constrained circuit layouts.
• High DC current gain characteristics suitable for sensitive signal amplification and switching applications.

Applications

• Automotive electronic systems requiring qualified discrete components
• General-purpose signal amplification circuits
• Electronic switching applications

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix matches the required AEC-Q100 qualification status. Check for end-of-life notices as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet. Validate package markings against official documentation to prevent counterfeit risks.

Selection Notes

Select this component when dual NPN functionality is required in an automotive context. The SOT-143-4 package offers a compact footprint compared to larger alternatives. Consider the 30 V voltage rating and 100 mA current limit for circuit design constraints. The high gain range reduces base drive requirements. Verify thermal management capabilities given the 300 mW power dissipation limit in the chosen enclosure.

Part Context

This part belongs to the BCV61 series of dual NPN transistors produced by Infineon Technologies. It is specifically engineered for automotive electronics, adhering to strict quality standards defined by AEC-Q100. The device utilizes silicon technology and is packaged in SOT-143-4 for surface mount assembly. It serves as a specialized component for integrated circuits requiring dual transistor configurations in compact forms.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon documentation for cross-reference information or contact technical support for validated alternatives.