BCW 67A E6327

Description：TRANS PNP 32V 0.8A PG-SOT23
Series：-

SKU:e40b7ccd0862 Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 32V 0.8A PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：32 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
Power - Max：330 mW
Frequency - Transition：200MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

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BCW 67A E6327

Overview

The BCW 67A E6327 is an NPN silicon general-purpose amplifier transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 32 V, a maximum collector-base voltage (VCBO) of 45 V, and a maximum emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 800 mA with a power dissipation rating of 330 mW. It features a transition frequency (fT) of 200 MHz and a DC current gain (hFE) ranging from 160 to 400.

Feature Summary

NPN silicon construction for general-purpose amplification applications
Automotive qualification compliant with AEC-Q100 standards
Surface-mount SOT-23-3 packaging for compact circuit integration

Applications

General-purpose signal amplification
Switching circuits in consumer electronics
Automotive embedded control systems

Procurement Notes

Verify the specific suffix 'E6327' against official Infineon documentation to confirm tape-and-reel packaging details and RoHS compliance status. Confirm that the component remains available or identify end-of-life notices prior to design finalization. Ensure the selected variant matches the required hFE binning and thermal characteristics for the target application environment.

Selection Notes

Select this component when an NPN transistor with 32 V VCEO and 800 mA capability is required in a small SOT-23-3 footprint. Consider the 200 MHz transition frequency for medium-speed switching or amplification tasks. Verify that the 330 mW power dissipation limit accommodates the thermal management strategy of the host system without exceeding the 150°C junction temperature threshold.

Part Context

This part belongs to the BCW67 series of NPN bipolar junction transistors designed for low-power, high-frequency applications. The series is widely used in portable devices and automotive modules due to its robustness and small form factor. The BCW67A variant specifically denotes a particular DC current gain classification within the broader family, ensuring consistent performance across production batches.