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Product Detailed Parameters
- Description：TRANS NPN 32V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BCW33LT3G is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of 32 Vdc and a continuous collector current of 100 mAdc. The device features a DC current gain (hFE) ranging from 420 to 800 at 2.0 mAdc. Thermal dissipation reaches 225 mW on an FR-5 board. It utilizes a SOT-23 package and supports junction temperatures between -55°C and +150°C.
Feature Summary
- High DC current gain suitable for amplification applications
- Low noise figure characteristics for signal processing
- Surface mount SOT-23 packaging for compact designs
Applications
- General purpose switching circuits
- Audio pre-amplifier stages
- Small-signal amplification tasks
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm tape and reel quantities and lead-free status. Ensure the component matches the required SOT-23 pinout configuration. Cross-reference datasheet revision numbers to validate electrical parameter tolerances before finalizing procurement specifications.
Selection Notes
Select this component when high current gain is required for low-current signal handling. Evaluate thermal resistance limits for the intended PCB substrate. Confirm that the 32 Vdc breakdown voltage aligns with circuit operating conditions. Consider noise performance requirements for sensitive analog front-end designs.
Part Context
This part belongs to the BCW33 series of NPN silicon transistors designed for general-purpose use. It serves as a surface-mount alternative to through-hole variants, maintaining similar electrical characteristics within a compact footprint. The series is engineered for reliable operation in consumer electronics and industrial control systems requiring small-signal processing.
Replacement Considerations
BCW33LT1
FAQ
What is the DC current gain range for the BCW33LT3G?
The DC current gain (hFE) ranges from 420 to 800 when measured at a collector current of 2.0 mAdc and a collector-emitter voltage of 5.0 Vdc.
What is the maximum power dissipation rating?
The total device dissipation is rated at 225 mW when mounted on an FR-5 board at an ambient temperature of 25°C.
Does the device support lead-free packaging?
Yes, the BCW33LT3G variant is available in Pb-Free packages compliant with RoHS standards.
