BCW61B,215

Overview

The BCW61B,215 is a silicon NPN single bipolar junction transistor manufactured by Nexperia. It is housed in an SOT-23 (TO-236AB) surface-mount package. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage rating of 32 V. The device features a collector-base voltage of 32 V and an emitter-base voltage of 5 V. Power dissipation is rated at 250 mW, with a transition frequency of 250 MHz. The component operates within a temperature range of -65°C to +150°C.

Feature Summary

• Single NPN configuration for discrete switching and amplification
• Small outline SOT-23 plastic surface-mount package
• High current gain capability up to 450
• Wide operating temperature range suitable for industrial environments

Applications

• General-purpose switching circuits
• Amplifier stages
• Driver applications for low-power loads

Procurement Notes

Verify the specific suffix

Selection Notes

Select this component for designs requiring a standard NPN transistor in a compact SOT-23 footprint. Ensure the circuit voltage does not exceed 32 V and current remains below 100 mA. Consider the 250 mW power dissipation limit when designing thermal management solutions for enclosed spaces.

Part Context

This part belongs to Nexperia's general-purpose BJT portfolio, designed for cost-effective mass production. The BCW61 series offers a balance of performance and reliability for consumer electronics and industrial control systems. It serves as a common replacement for legacy components in existing PCB layouts utilizing the TO-236AB package.

Replacement Considerations

Check pinout compatibility with SOT-23 packages. Verify that substitute parts meet the 32 V VCEO and 100 mA IC requirements. Ensure the alternative device supports the required hFE range and transition frequency for the specific application bandwidth.