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The BCW66KHE6327HTSA1 is an NPN silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in a surface-mount SOT-23-3 package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current of 800 mA. The device has a power dissipation rating of 500 mW and a transition frequency (fT) of 170 MHz. DC current gain ranges from 250 to 630. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification for automotive applications.
Verify the specific suffix HE6327HTSA1 against official Infineon documentation to confirm tape-and-reel quantities and RoHS compliance status. Confirm end-of-life or obsolescence status directly with the manufacturer, as distributor listings may indicate discontinuation. Ensure the component meets AEC-Q100 requirements if used in automotive designs by checking the latest datasheet revision.
Select this component when a high-gain NPN transistor is required in a compact SOT-23-3 footprint for automotive or industrial environments. The 45 V rating suits low-voltage signal processing. Compare the 170 MHz transition frequency against application bandwidth needs. Verify thermal management capabilities given the 500 mW dissipation limit in small packages.
This part belongs to the BCW66 series of general-purpose NPN transistors designed for audio frequency and switching applications. The series is known for high linearity and gain consistency. The specific suffix indicates automotive-grade screening and standard reel packaging formats suitable for automated surface-mount assembly processes.
Check for direct pin-compatible alternatives within the BCW66 family, such as BCW66KGE6327HTSA1, ensuring gain ranges match design requirements. Verify that any substitute maintains AEC-Q100 qualification and identical SOT-23-3 mechanical dimensions for board compatibility.