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Product Detailed Parameters
- Description：TRANS PNP 45V 0.8A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：350 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BCW68G is a PNP general-purpose amplifier and switching transistor manufactured by ON Semiconductor. It operates with a collector-emitter voltage of -45 V, a collector-base voltage of -60 V, and an emitter-base voltage of -5 V. The device supports continuous collector currents up to -800 mA and dissipates up to 350 mW of power. Key electrical characteristics include a DC current gain ranging from 120 to 400 at -10 mA, a transition frequency of 100 MHz, and a maximum junction temperature of +150 °C. It is housed in a surface-mount SOT-23 package.
Feature Summary
- Designed for general-purpose amplifier and switching applications
- Supports high-speed operation with a 100 MHz transition frequency
- Capable of handling continuous collector currents up to 800 mA
- Features low saturation voltages for efficient switching performance
Applications
- General-purpose amplification circuits
- Electronic switching applications
- Driver stages for loads requiring up to 500 mA
Procurement Notes
Verify the specific ordering suffix against the official ON Semiconductor website to ensure compatibility with current system requirements. Confirm that the component is sourced from authorized distributors to guarantee authenticity and traceability. Review the absolute maximum ratings carefully before integration to prevent overstressing the device during operation.
Selection Notes
Select this component for designs requiring a PNP transistor with moderate current handling capabilities and high-frequency response. Ensure the application stays within the specified thermal limits and does not exceed the maximum junction temperature of 150 °C. Validate all operating parameters against customer-specific application conditions as typical values may vary.
Part Context
This device belongs to the BCW68 series of PNP silicon planar medium power transistors. It is part of a complementary pair family, often used alongside NPN counterparts like the BCW66. Originally developed by Fairchild Semiconductor, it is now produced under the ON Semiconductor brand following corporate integration.
Replacement Considerations
- BCW68GRLO
- BCW68GL99Z
FAQ
What is the marking code for the BCW68G in the SOT-23 package?
The marking code for the BCW68G is DG.
What is the maximum collector-emitter breakdown voltage for this device?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is -45 V when the collector current is -10 mA and the base current is 0.
Is this component suitable for use in life support systems?
No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems or medical devices without express written approval.
