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The BCX42E6433HTMA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 125 V and a continuous collector current rating of 800 mA. The device operates within a temperature range of -65 °C to +150 °C, with a maximum power dissipation of 330 mW in an SOT-23-3 surface-mount package. Key electrical characteristics include a gain-bandwidth product of 150 MHz and a collector-emitter saturation voltage of 900 mV.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix E6433HTMA1 matches required packaging and reel specifications. Check for end-of-life status or discontinuation notices prior to finalizing procurement plans to ensure long-term supply stability.
Select this component when a single NPN BJT with 125 V blocking capability and 800 mA current handling is required. Ensure the SOT-23-3 footprint aligns with the PCB layout constraints. Consider the 330 mW power dissipation limit and thermal management requirements for the intended operating environment.
This part belongs to the BCX42 family of NPN silicon transistors from Infineon Technologies. These devices are engineered for robust performance in audio and switching environments. The specific HTMA1 suffix denotes the standard tape-and-reel packaging format used for automated surface-mount assembly processes.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering any alternative components from other manufacturers.