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The BCX5216QTA is a PNP medium power transistor manufactured by Diodes Incorporated in an SOT-89 package. It features a collector-emitter breakdown voltage of -60V and a continuous collector current rating of -1A. The device supports a peak pulse collector current of -2A and maintains a low saturation voltage below -500mV at -0.5A. It operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 1W under standard conditions.
Verify the component matches the exact BCX5216QTA designation from Diodes Incorporated. Confirm that the datasheet DS37033 Rev. 4-2 applies to the specific batch. Ensure the supplier provides traceability documentation required for automotive-grade parts, including PPAP capability and IATF16949 certification evidence.
Select this component when designing circuits requiring a PNP transistor with a minimum -60V collector-emitter breakdown voltage. It is suitable for applications needing a continuous current capacity of 1A in a compact SOT-89 surface-mount package. Consider the complementary NPN type BCX5616Q if a matched pair is required for push-pull configurations.
This part belongs to the BCX5216Q/BCX5316Q series of PNP medium power transistors designed specifically for automotive environments. It is manufactured in IATF16949 certified facilities and is fully RoHS compliant. The 'Q' suffix indicates its qualification for automotive use, while the 'TA' suffix denotes the reel packaging format containing 1,000 units per 7-inch reel.
The complementary NPN transistor in this series is the BCX5616Q. For general-purpose replacements outside automotive specifications, verify that alternative BJT packages and electrical ratings meet or exceed the -60V VCEO and -1A IC requirements.