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The BCX53-10TF is a PNP power bipolar transistor from the Nexperia BCX53T series, housed in an SOT89 (SC-62) surface-mounted package. It supports a collector-emitter voltage of -80 V and a continuous collector current of -1 A. The device features a DC current gain range of 63 to 160 at VCE = -2 V and IC = -150 mA. It has a peak collector current capability of -2 A for pulses up to 1 ms. Thermal resistance from junction to ambient is specified at 250 K/W in free air.
Verify the specific suffix 'TF' against the official datasheet to confirm packaging details such as cut tape or reel specifications. Ensure the ordering code matches the required current gain bin (-10T). Confirm that the SOT89 footprint aligns with your PCB design guidelines before finalizing procurement orders.
Select this component when a PNP transistor with 80 V breakdown and 1 A continuous current is required. The -10T variant provides a guaranteed hFE range of 63 to 160. Consider the SOT89 package size for thermal management needs. Verify compatibility with high-side switching topologies if used in driver circuits.
This part belongs to the BCX53T series of PNP power transistors manufactured by Nexperia. It serves as the complement to the BCX56T NPN series. The device is designed for general-purpose power switching and amplification tasks in compact surface-mount designs.
BCX53-10T is the base model number for this device family. Designers should verify pinout compatibility and thermal characteristics when substituting with other PNP transistors in the same voltage and current class.
The DC current gain (hFE) for the BCX53-10T ranges from 63 to 160, measured at VCE = -2 V and IC = -150 mA.
Yes, the BCX53T series, including the BCX53-10T variant, is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The device supports a peak collector current (ICM) of -2 A for single pulses with a duration of tp ≤ 1 ms.