BCX5416TA

Overview

The BCX5416TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT89 surface-mount package. It features a collector-emitter breakdown voltage of 45V and supports a continuous collector current of 1A with a peak pulse capability of 2A. The device utilizes epitaxial planar die construction and offers a DC current gain range of 75 to 250 at specific test conditions. Key electrical characteristics include a low saturation voltage of less than 500mV at 0.5A and a transition frequency of 150MHz.

Feature Summary

• Epitaxial planar die construction for robust performance
• Low collector-emitter saturation voltage for efficient switching
• Totally lead-free and fully RoHS compliant manufacturing
• Halogen and antimony free green device packaging

Applications

• Medium power switching applications
• Amplification circuits
• Audio frequency drivers and output stages

Procurement Notes

Verify the ordering suffix TA indicates a 1000-unit reel packing quantity on a 7-inch carrier. Confirm the marking code BD corresponds to the BCX5416 variant. Ensure compliance with specified environmental standards if required for the target assembly process.

Selection Notes

Select this component when a 45V NPN transistor with 1A continuous current handling is required in a compact SOT89 footprint. Consider the specific hFE binning (75-250) for amplifier linearity requirements. Evaluate thermal dissipation limits based on the intended copper pad layout area for adequate heat sinking.

Part Context

This part belongs to the BCX54/55/56 family of NPN medium power transistors from Diodes Incorporated. The BCX54 series specifically denotes the 45V rating variant within this lineup. Complementary PNP types are available as BCX51, BCX52, and BCX53 for push-pull configurations.

Replacement Considerations

Cross-reference with Nexperia BCX54-16T or BCX54-16 for equivalent specifications. Verify pinout compatibility and thermal resistance differences before substitution.