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The BCX54TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT-89 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 45 V and a continuous collector current rating of 1 A. The device supports a peak pulse collector current of 2 A and utilizes epitaxial planar die construction. Key electrical characteristics include a maximum DC current gain (hFE) ranging from 25 to 250 depending on the test condition, a transition frequency (fT) of 150 MHz, and a collector-emitter saturation voltage below 500 mV at 0.5 A.
Verify the specific part number against the manufacturer's official datasheet DS35369 Rev. 13-2 to confirm technical specifications and compliance standards. Ensure that the ordering suffix matches the required packaging quantity and carrier type. Confirm that the component meets all relevant environmental directives applicable to your region before finalizing procurement.
Select this component when designing circuits requiring an NPN transistor with a 45 V collector-emitter voltage rating and up to 1 A continuous current handling. Consider the SOT-89 package dimensions and thermal resistance values provided in the datasheet for proper heat dissipation planning. Evaluate the DC current gain ranges to ensure compatibility with the base drive requirements of the intended application circuit.
This component belongs to the BCX54/55/56 series of NPN medium power transistors produced by Diodes Incorporated under the DiodesZetex brand. The series shares common mechanical data and manufacturing processes, differentiated primarily by their collector-emitter breakdown voltage ratings. The BCX54 variant specifically targets applications necessitating a 45 V voltage threshold within the same physical footprint as higher voltage counterparts.
Complementary PNP types available within the same family include the BCX51, BCX52, and BCX53 transistors.