SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX55-10,115 is an NPN medium power transistor from the Nexperia BCX55 series, housed in a SOT89 (SC-62) flat lead Surface-Mounted Device plastic package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A. The device offers a DC current gain range of 63 to 160 at VCE = 2 V and IC = 150 mA. Key electrical parameters include a peak collector current of 2 A, a total power dissipation up to 1.35 W depending on mounting conditions, and a transition frequency of 180 MHz typical.
Verify the specific part number suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure that the ordering information matches the required gain binning and package variant before finalizing procurement orders.
Select this component when a single NPN transistor with medium power handling is required in a compact SMD form factor. Consider the exposed pad thermal design requirements for adequate heat dissipation. Verify that the 60 V breakdown voltage meets the circuit's maximum operating stress levels.
This component belongs to the BCX55 series of NPN medium power transistors. The series includes variants with different current gain ranges, such as the standard BCX55 and the BCX55-16. The PNP complement for this series is the BCX52 family, which shares similar physical and electrical characteristics.
The BCX52-10,115 serves as the PNP complement within the same series. Other BCX55 variants like the BCX55 or BCX55-16 offer different gain ranges but share the same package and voltage ratings.
The marking code for the BCX55-10 is BG.
Pin 1 is the emitter, Pin 2 is the collector, and Pin 3 is the base.
The maximum junction temperature is 150 °C.