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The BCX55-10E6327 is a single NPN silicon bipolar junction transistor from the BCX55 series, manufactured by Infineon Technologies. It is designed for audio frequency applications and housed in an SOT-89-4 surface-mount package. The device supports a maximum collector current of 1.5 A and a collector-emitter voltage of 60 V. Key electrical parameters include a power dissipation rating of 2 W, a transition frequency of 100 MHz, and a DC current gain range with a minimum of 40 and a maximum of 250.
Verify the exact part designation against official Infineon documentation, as the provided knowledge base lists BCX 55 H6327 rather than BCX55-10E6327. Confirm RoHS compliance status and check for end-of-life notifications or discontinuance notices directly from the manufacturer before procurement planning.
Select this component when a high-current NPN transistor with moderate gain is required for audio or general-purpose tasks. Ensure the application voltage does not exceed 60 V and that thermal management can handle 2 W of power dissipation in the specified SOT-89-4 package configuration.
This component belongs to the BCX55 family of single NPN transistors produced by Infineon Technologies. The series is characterized by its suitability for audio frequencies and medium-power handling capabilities within compact surface-mount packages.
Public confirmed substitute part numbers are not available in the provided source material.