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Product Detailed Parameters
- Description：TRANS NPN 60V 1A SOT-89
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：500 mW
- Frequency - Transition：180MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BCX55-16-QF is an NPN medium power transistor from the Nexperia BCX55-Q series, housed in a SOT89 (SC-62) surface-mounted package. It supports a collector-emitter voltage of 60 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device features a DC current gain range of 100 to 250 at 150 mA. It includes an exposed heatsink for thermal management and is qualified under AEC-Q101 standards for automotive reliability.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Exposed heatsink for improved thermal conductivity
- High current gain selection (BCX55-16-Q)
- Single pulse peak collector current up to 2 A
Applications
- Linear voltage regulators
- Low-side switches
- MOSFET drivers
- Battery-driven devices
Procurement Notes
Verify the specific suffix 'QF' against the official Nexperia ordering information table. The provided datasheet lists 'BCX55-16-Q' as the standard type number with marking code 'BM'. Confirm if 'QF' denotes a specific tape-and-reel packaging variant or distribution channel designation that does not alter the electrical characteristics defined in the product data sheet.
Selection Notes
Select this component when a robust NPN switch or amplifier is required in space-constrained designs utilizing the SOT89 footprint. The BCX55-16-Q variant provides a higher minimum current gain compared to the BCX55-Q and BCX55-10-Q options. Ensure the application operates within the 60 V collector-emitter limit and utilizes adequate PCB copper area for the exposed pad to manage the 0.5 W to 1.35 W power dissipation effectively.
Part Context
This part belongs to the BCX55-Q series of NPN medium power transistors designed for high reliability. The series shares the same SOT89 package and general electrical limits but offers different current gain bins. The PNP complement for this series is the BCX52-Q series. The 'Q' designation indicates qualification for automotive environments according to AEC-Q101 stress test requirements.
Replacement Considerations
Direct functional substitutes within the same family include BCX55-Q and BCX55-10-Q, noting differences in current gain ranges. For PNP applications, consider the BCX52-16-Q. Verify pinout compatibility (Emitter-Collector-Base) and thermal resistance requirements when substituting.
