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The BCX55TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT-89 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 60V and supports a continuous collector current of 1A with a peak pulse current of 2A. The device utilizes epitaxial planar die construction and offers a transition frequency (fT) of 150MHz at 50mA. Key electrical characteristics include a maximum DC current gain (hFE) ranging from 25 to 250 depending on the test condition, a collector-emitter saturation voltage below 500mV at 500mA, and a base-emitter turn-on voltage up to 1.0V.
Verify the specific part number against official Diodes Incorporated documentation to ensure correct voltage rating and polarity specifications. Confirm that the SOT-89 package dimensions align with your PCB footprint requirements. Check for compliance with relevant environmental directives such as RoHS if required for your region. Ensure thermal management strategies account for the specified power dissipation limits under your operating conditions.
Select this component when a 60V NPN transistor with 1A continuous current handling is required in a compact SOT-89 form factor. Consider the complementary BCX53TA for PNP applications within the same series. Evaluate thermal resistance values based on your copper area and mounting configuration to ensure safe operating temperatures are maintained during operation.
This component belongs to the BCX54/55/56 family of NPN medium power transistors designed for general-purpose use. The BCX55 variant specifically provides a 60V breakdown voltage, distinguishing it from the 45V BCX54 and 80V BCX56 models. All variants share identical pinouts and mechanical packaging, facilitating design flexibility across different voltage requirements.
BCX55TC serves as an alternative tape-and-reel packaging option for the same device.