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The BCX56-10R1 is an NPN silicon epitaxial transistor designed for medium power surface mount applications. It features a collector-emitter voltage of 80 Vdc, a collector-base voltage of 100 Vdc, and an emitter-base voltage of 5 Vdc. The device supports a continuous collector current of 1 Adc with a total power dissipation of 1.56 W at 25°C ambient temperature. Operating and storage temperatures range from -65 to 150 °C. The component is housed in a SOT-89 package (CASE 1213) and is supplied in tape and reel packaging containing 1000 units per reel.
Verify that the ordering suffix matches the required tape and reel configuration. Confirm the manufacturer marking code corresponds to the specific device variant. Ensure thermal management aligns with the specified junction-to-ambient resistance values. Check for RoHS compliance status if required by the assembly process. Validate the package dimensions against the design footprint.
Select this component when designing circuits requiring an NPN transistor with a minimum 80 V collector-emitter breakdown voltage. Consider the SOT-89 package constraints regarding thermal dissipation and physical space. Evaluate the DC current gain characteristics across the expected operating current range. Verify compatibility with the intended soldering profile and maximum peak soldering temperature limits.
This part belongs to the BCX56 series of NPN silicon epitaxial transistors manufactured by onsemi. The series is characterized by its suitability for general-purpose amplification tasks within electronic systems. The specific model utilizes the SOT-89 surface mount package to facilitate automated assembly processes while maintaining robust electrical performance parameters.
Consult official cross-reference documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configurations and package dimensions. Verify that alternative components meet or exceed the original voltage, current, and power dissipation ratings.
The maximum collector-emitter voltage (VCEO) is rated at 80 Vdc.
The device is available in a 7-inch/1000 unit tape and reel configuration.
The typical current-gain bandwidth product (fT) is 130 MHz under standard test conditions.