SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX5610TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT-89 package. It features a collector-emitter breakdown voltage of 80 V and supports a continuous collector current of 1 A with a peak pulse current capability of 2 A. The device utilizes epitaxial planar die construction to achieve a low saturation voltage of less than 500 mV at 0.5 A. Electrical characteristics include a transition frequency of 150 MHz and a DC current gain ranging from 40 to 250 depending on the operating conditions.
Verify the specific part number against official manufacturer documentation to ensure correct electrical ratings and package type. Confirm compliance requirements such as RoHS and halogen-free status if applicable to your design. Check the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing component selection.
Select this component for designs requiring an NPN transistor with high voltage tolerance and moderate current handling capabilities. Ensure the thermal management strategy accounts for the power dissipation limits defined in the datasheet. Verify that the required DC current gain falls within the specified range for the intended operating current levels.
This component belongs to the BCX54/55/56 series of NPN medium power transistors. It shares the same SOT-89 package and general structural features with other variants in the family, differing primarily in collector-emitter breakdown voltage ratings. The BCX56 variant specifically offers an 80 V rating compared to lower voltage options.
BCX56TA
The marking code for the BCX5610TA is BL.
No, the standard BCX5610TA is not automotive qualified. An automotive-compliant version is available under the separate part number BCX5616Q.
The maximum operating and storage temperature range (TJ, TSTG) is -55 to +150 °C.