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The BCX56,115 is an NPN medium power transistor housed in a SOT89 (SC-62) flat lead surface-mounted device plastic package. It supports a collector-emitter voltage of 80 V and a continuous collector current of 1 A. The component offers a peak collector current capability of 2 A for single pulses up to 1 ms. DC current gain ranges from 63 to 250 depending on operating conditions. Total power dissipation varies from 0.50 W to 1.35 W based on thermal mounting constraints.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical characteristics. The base part number covers multiple gain variants; ensure the selected variant matches the required DC current gain range for the intended circuit application before finalizing procurement orders.
Select this component when designing circuits requiring an NPN transistor with 80 V breakdown and 1 A continuous current handling. Evaluate the thermal resistance requirements carefully, as power dissipation capabilities depend heavily on the PCB copper area connected to the collector pad. Ensure the chosen gain bin aligns with the amplifier or switching requirements.
This component belongs to the Nexperia BCX56 series of NPN medium power transistors. The series includes variants such as BCX56-10 and BCX56-16, which differ primarily in their DC current gain specifications while sharing identical voltage ratings and physical packaging dimensions.
BCX56-10,115
Pin 1 is the emitter, Pin 2 is the collector, and Pin 3 is the base.
The maximum collector-base voltage (VCBO) is rated at 100 V.
No, unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use and lacks AEC-Q101 qualification.