BCX5616TA

$0.31

Description：TRANS NPN 80V 1A SOT-89-3
Series：-

SKU:0ed7eb42d9d8 Category: Single Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 80V 1A SOT-89-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
Power - Max：1 W
Frequency - Transition：150MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89-3
Grade：-
Qualification：-

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BCX5616TA

Overview

The BCX5616TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT89 surface-mount package. It features a collector-emitter breakdown voltage of 80V and supports a continuous collector current of 1A with a peak pulse current of 2A. The device utilizes epitaxial planar die construction and offers a low saturation voltage of less than 500mV at 0.5A. Electrical characteristics include a DC current gain ranging from 75 to 250 and a transition frequency of 150MHz. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Epitaxial planar die construction for reliable performance
Low saturation voltage capability for efficient switching
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Medium power switching applications
Amplification applications
Audio frequency drivers
Output stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size and tape width. Confirm compliance requirements including RoHS and halogen-free status directly with the manufacturer's datasheet or authorized distributors before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high voltage handling up to 80V and moderate current capacity. Ensure thermal management aligns with the specified junction-to-ambient resistance values based on the copper area available on the PCB layout. Consider the complementary PNP types if push-pull configurations are required.

Part Context

This part belongs to the BCX54/55/56 series of NPN medium power transistors. The '16' designation indicates a specific DC current gain binning range (75 to 250) compared to standard variants. It is designed for general-purpose amplification and switching tasks in consumer and industrial electronics.