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BCX6825H6327XTSA1 is an NPN silicon audio frequency transistor in SOT-89 packaging. It features a collector-emitter voltage of 20 V, collector-base voltage of 25 V, and emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A with a peak current of 2 A for pulses under 10 ms. Total power dissipation reaches 3 W at a case temperature of 114 °C or lower. Junction temperature ranges from -65 °C to 150 °C. DC current gain (hFE) spans 160 to 375 at IC = 500 mA and VCE = 1 V. Transition frequency is typically 100 MHz at IC = 100 mA and VCE = 5 V.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering code matches the BCX68-25 variant for the correct hFE binning range. Confirm lead times directly with authorized distributors as availability fluctuates.
Select this component when a high-gain NPN transistor with 1 A continuous current capability is required in a compact SOT-89 package. The BCX68-25 variant offers a minimum hFE of 160, making it suitable for low-drive applications. Consider the complementary BCX69 PNP type for push-pull configurations. Verify thermal management requirements given the 3 W power dissipation limit.
The BCX68 series comprises NPN silicon AF transistors designed for robust performance in audio and switching applications. Manufactured by Infineon Technologies, these devices utilize advanced silicon planar technology. The series includes variants with different gain bins to accommodate diverse circuit requirements while maintaining consistent electrical characteristics across the product line.
BCX69H6327XTSA1 serves as the complementary PNP counterpart within the same family.