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The BCX70HE6433HTMA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and holds AEC-Q100 automotive qualification. The device supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 380 to 630, a transition frequency (fT) of 250 MHz, and a power dissipation rating of 330 mW. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix HE6433 against official Infineon documentation to confirm exact binning and packaging specifications. Confirm current production status as related BAV70E variants indicate end-of-life trends. Ensure compatibility with existing PCB footprints and reflow soldering profiles before finalizing procurement plans.
Select this component when high current gain and automotive qualification are required in a compact SOT-23 form factor. Compare the 250 MHz transition frequency against application bandwidth needs. Evaluate the 330 mW power dissipation limit relative to thermal management constraints in the target assembly design.
This part belongs to the BCX70 series of general-purpose NPN transistors designed for audio and switching applications. It shares the SOT-23-3 footprint with other low-power discrete semiconductors but offers specific gain and voltage ratings tailored for automotive and industrial signal processing tasks requiring reliable small-signal performance.
BCX70KE6327HTSA1: Verified alternative within the same manufacturer portfolio featuring identical electrical parameters and package configuration.