BCX70K

Overview

The BCX70K is an NPN epitaxial silicon transistor housed in a SOT-23 surface-mount package. It features a collector-emitter voltage of 45 V and a maximum collector current of 200 mA, with power dissipation rated at 350 mW. The device provides a DC current gain ranging from 100 to 630 depending on the operating point. Electrical characteristics include a transition frequency of 125 MHz and a noise figure of 6 dB. Storage temperature limits span from -55 °C to 150 °C.

Feature Summary

• Epitaxial silicon construction for reliable general-purpose amplification
• SOT-23 surface-mount packaging optimized for low-power applications
• High DC current gain suitable for signal processing tasks

Applications

• General purpose amplifier circuits
• Signal switching applications
• Low-frequency audio stages

Procurement Notes

Verify the specific ordering suffix against official ON Semiconductor documentation to ensure correct tape-and-reel quantities and RoHS compliance status. Confirm that the component meets all absolute maximum ratings for your intended thermal environment before finalizing procurement orders.

Selection Notes

Select this component when a small-signal NPN transistor with moderate voltage handling and high gain is required in a compact footprint. Ensure the application current remains within the 200 mA limit and verify that the 350 mW power dissipation rating accommodates the expected thermal load without exceeding junction temperature limits.

Part Context

This part belongs to the general-purpose bipolar junction transistor family originally developed by Fairchild Semiconductor and now managed by ON Semiconductor following corporate integration. The datasheet indicates it is produced to support existing customers rather than being recommended for new designs.

Replacement Considerations

The BC847C is documented as a similar level replacement with the same pinout and package type.