BCX71JE6327HTSA1

Overview

The BCX71JE6327HTSA1 is a single NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It utilizes the PG-SOT23 surface-mount package with three pins. Key electrical parameters include a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 250 at 2 mA and 5 V, with a transition frequency (fT) of 250 MHz. Power dissipation is rated at 330 mW. The saturation voltage is 550 mV at 1.25 mA base current and 50 mA collector current. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Integrated digital logic interface for simplified circuit design
• High-frequency performance suitable for audio and general-purpose switching applications
• Automotive-grade reliability compliant with AEC-Q101 standards

Applications

• General-purpose switching circuits
• Audio amplifier stages
• Logic level translation interfaces

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-23 footprint requirements in the target PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before final procurement approval.

Selection Notes

Select this component when a high-gain NPN transistor is required for low-current switching or amplification tasks within compact surface-mount designs. The integrated base resistors simplify biasing networks compared to discrete transistors. Consider the 45 V breakdown voltage and 100 mA current limits to ensure operation remains within safe operating areas during peak load conditions.

Part Context

This part belongs to the BCX71 series of digital transistors, which integrate built-in base resistors to reduce external component count. The E6327HTSA1 designation indicates a specific tape-and-reel packaging format optimized for automated surface-mount assembly processes. It serves as a complementary counterpart to other variants within the broader BCY/BCR family of pre-biased semiconductor devices.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may lack the specific hFE binning or automotive qualification required for direct replacement without circuit re-validation.