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Product Detailed Parameters
- Description：32V 100MA 340MW TH TRANSISTOR-SM
- Series：BCY78
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 2.5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
- Power - Max：1 W
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18
- Grade：-
- Qualification：-
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Overview
The BCY78-IX is a PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-18 metal can package with three leads for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. It supports a continuous collector current of 100 mA and dissipates up to 1 W of power. The transition frequency (fT) is rated at 100 MHz, with a minimum DC current gain (hFE) of 120.
Feature Summary
- Constructed from silicon material for reliable small-signal amplification and switching operations.
- Encased in a hermetically sealed TO-18 metal can package designed for high thermal stability.
- Capable of handling significant power dissipation within a compact form factor.
Applications
- General-purpose low-frequency amplification circuits
- Switching applications requiring moderate current handling
- Audio signal processing stages
Procurement Notes
Verify the specific suffix 'IX' against the manufacturer's official datasheet to confirm pinout configuration and electrical tolerances. Ensure the tin/lead composition aligns with project requirements regarding RoHS compliance standards before finalizing procurement specifications.
Selection Notes
Select this component when a robust metal-can PNP transistor is required for environments demanding high thermal resistance. Compare the 100 mA current rating and 45 V breakdown voltage against circuit demands to ensure adequate headroom for operation.
Part Context
This part belongs to the BCY78 series of PNP transistors produced by Central Semiconductor. These devices are commonly used as replacements for legacy military-grade components, offering comparable performance in a standard TO-18 package suitable for industrial and commercial electronics.
Replacement Considerations
Potential substitutes include the BCY79-VIII or generic 2N3906 equivalents, provided the voltage and current ratings meet the specific circuit requirements. Verify pin compatibility and thermal characteristics before implementation.
