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Product Detailed Parameters
- Description：TRANS PNP 45V 1.5A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD13610S is a PNP epitaxial silicon transistor from the BD136 series, manufactured by onsemi. It features a TO-126-3 package and supports a maximum collector current of 1.5 A with a collector-emitter voltage rating of 45 V. The device offers a DC current gain (hFE) range of 63 to 160 at IC = -150 mA. Key electrical parameters include a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a power dissipation capability of 12.5 W at case temperatures up to 25°C.
Feature Summary
- Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
- Pre-selected DC current gain classification for consistent performance
- Complements NPN types BD135, BD137, and BD139
Applications
- Audio amplifier circuits
- Driver stages in complementary configurations
- Quasi-complementary circuit designs
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for End-of-Life notices prior to procurement. Ensure packaging specifications match design requirements. Validate datasheet revisions against current production batches to guarantee parameter accuracy.
Selection Notes
Select this component for medium-power linear and switching applications requiring high DC current gain. Consider thermal management capabilities when designing for continuous operation above 25°C ambient temperature. Verify compatibility with complementary NPN transistors in push-pull topologies. Evaluate saturation voltage characteristics for efficiency requirements in driver stages.
Part Context
This part belongs to the BD136 family of PNP epitaxial silicon transistors. The series includes variants with different voltage ratings such as BD138 and BD140. These components are engineered for robust performance in audio and driver applications, offering reliable operation within specified thermal limits.
Replacement Considerations
BD136G is a direct substitute within the same series. Verify pinout compatibility and ensure voltage ratings meet application requirements when substituting.
