BD13716S

BD13716S

  • Description:TRANS NPN 60V 1.5A TO-126-3
  • Series:-

SKU:1f0ed98a1ed0 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 60V 1.5A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

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BD13716S

Overview

The BD13716S is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. It features a collector-emax voltage of 60 V and a continuous collector current rating of 1.5 A. The device is housed in a TO-126-3 through-hole package, providing a power dissipation capacity of 1.25 W. This component is designed for general-purpose switching and amplification applications requiring moderate power handling capabilities within standard industrial and consumer electronics environments.

Feature Summary

  • NPN epitaxial silicon construction for reliable switching performance
  • Through-hole TO-126-3 package design for standard board mounting
  • Optimized for general-purpose amplifier and switch circuits

Applications

  • General-purpose signal amplification
  • Low-power switching circuits
  • Consumer electronic device control stages

Procurement Notes

Verify the exact part number against official onsemi documentation to ensure compatibility with specific circuit requirements. Confirm that the TO-126-3 package dimensions align with the target PCB footprint. Review the datasheet electrical characteristics thoroughly before integration to guarantee operation within safe limits for the intended application environment.

Selection Notes

Select this component when a single NPN transistor with 60 V breakdown and 1.5 A current capability is required. The TO-126-3 package suits designs needing through-hole mounting rather than surface-mount alternatives. Ensure thermal management strategies account for the 1.25 W dissipation rating under maximum load conditions during steady-state operation.

Part Context

This device belongs to the broader family of bipolar transistors offered by onsemi. It serves as a discrete solution for power control tasks where integrated circuits may be overly complex or costly. The BD13716S provides a standardized interface for engineers designing modular electronic systems requiring robust, standalone switching elements.

Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any alternative maintains identical pinout configuration and electrical ratings to prevent circuit modification.

BD13716SBD13716S

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