BD13810S

Overview

The BD13810S is an NPN silicon epitaxial planar power transistor manufactured by onsemi. It is housed in a TO-126-3 (TO-225AA) leaded package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 1.5 A. It operates within a junction temperature range of -55 °C to +150 °C, with a maximum power dissipation capability of 1.25 W.

Feature Summary

• NPN polarity configuration utilizing silicon epitaxial planar technology
• Integrated thermal design supporting high-power dissipation applications
• Robust mechanical construction suitable for through-hole PCB mounting

Applications

• General-purpose power switching circuits
• Linear regulation stages requiring moderate current handling
• Audio amplifier output stages

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Ensure the component matches the required TO-126-3 footprint and pinout configuration for your circuit design. Cross-reference datasheet specifications for collector-emitter voltage and current ratings prior to integration.

Selection Notes

Select this component when an NPN bipolar junction transistor is required for moderate power applications. Consider the 45 V breakdown voltage and 1.5 A current limits relative to circuit demands. Evaluate the thermal management requirements given the 1.25 W power dissipation limit in the specified package style.

Part Context

This part belongs to the BD136 series of general-purpose power transistors. The series includes complementary PNP variants such as the BD137. These devices are engineered for robust performance in standard electronic applications, offering reliable switching and amplification capabilities within their defined voltage and current operating ranges.

Replacement Considerations

BD13616STU serves as a direct substitute within the same product family.