BD1386S

$0.11

Description：TRANS PNP 60V 1.5A TO-126-3
Series：-

SKU:f34c9dde75a6 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 60V 1.5A TO-126-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：1.25 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD1386S

Overview

The onsemi BD1386S is a PNP power bipolar junction transistor designed for medium-power applications. It features a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1.5 A. The device utilizes a TO-126 package with three pins, suitable for through-hole mounting. Key electrical parameters include a maximum collector-base voltage (VCBO) of 60 V, a maximum emitter-base voltage (VEBO) of 5 V, and a total device power dissipation (PD) of 1.25 W at an ambient temperature of 25°C. The operating and storage junction temperature range spans from -55°C to +150°C.

Feature Summary

PNP polarity configuration for complementary circuit designs
Medium-power capability with 1.5 A continuous collector current
High DC current gain for effective signal amplification
RoHS compliant lead-free and halogen-free construction

Applications

Audio amplifier circuits
Driver stages in quasi-complementary configurations
Complementary push-pull output stages

Procurement Notes

Verify the specific suffix '6S' against official datasheets to confirm pinout and mechanical dimensions, as variations exist within the BD138 family. Ensure compatibility with required thermal management solutions given the 1.25 W power dissipation limit. Confirm RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a PNP transistor with 60 V rating and 1.5 A current capacity is required in a TO-126 package. It serves as a complement to NPN devices like the BD139 series. Consider thermal resistance requirements for high-duty cycle operations and verify that the 5 V emitter-base voltage limit meets the circuit's drive conditions.

Part Context

The BD1386S belongs to the BD138 series of plastic medium-power silicon PNP transistors manufactured by onsemi. This series is engineered for audio and driver applications, offering high DC current gain. It is part of a complementary pair system, often used alongside NPN counterparts like the BD137 or BD139 to form balanced amplifier stages.