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The BD13910S is a single NPN epitaxial silicon transistor manufactured by onsemi. It is designed for general-purpose switching and amplification applications. The device features an 80 V collector-emitter voltage rating and supports a continuous collector current of 1.5 A. It is housed in a TO-126-3 through-hole package, which provides a power dissipation capability of 1.25 W. The component exhibits a minimum DC current gain (hFE) of 40 at specific test conditions, ensuring reliable performance in standard circuit configurations.
Verify the exact part number BD13910S against official onsemi documentation to ensure compatibility with the required voltage and current specifications. Confirm that the TO-126-3 package type matches the PCB footprint requirements. Cross-reference datasheet electrical characteristics, particularly hFE ranges and power dissipation limits, with the intended application constraints before finalizing procurement decisions.
Select this component when an NPN transistor with an 80 V rating and 1.5 A current capacity is required. The TO-126-3 package is suitable for through-hole assembly processes. Ensure the application does not exceed the 1.25 W power dissipation limit under operating conditions. Consider thermal management requirements if the device operates near its maximum ratings.
The BD13910S belongs to the BD139 series of NPN transistors from onsemi. This series is widely recognized for its reliability in medium-power applications. The '10' suffix typically denotes specific electrical parameter variations within the family, such as gain or voltage ratings, distinguishing it from other variants like the standard BD139.
Consult onsemi official documentation for verified substitute part numbers. Direct replacements must match the NPN polarity, 80 V rating, 1.5 A current capacity, and TO-126-3 package. Generic equivalents may differ in hFE or thermal characteristics.