BD14016S

Overview

The BD14016S is a PNP epitaxial silicon transistor from the BD140 series, manufactured by onsemi. It features a TO-126-3 through-hole package and supports a maximum collector current of 1.5 A with a VCEO of 80 V. The device offers a DC current gain (hFE) range of 40 to 250 and a power dissipation of 12.5 W at +25°C. It operates up to a maximum junction temperature of +150°C.

Feature Summary

• PNP polarity configuration for single transistor applications
• Epitaxial silicon construction for reliable switching performance
• Through-hole mounting in a TO-126-3 plastic case

Applications

• General-purpose switching circuits
• Audio amplifier driver stages
• Power regulation control loops

Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm exact electrical tolerances and packaging options. Ensure the component matches the required thermal resistance specifications for the intended heat sink application. Confirm RoHS compliance status directly with the manufacturer documentation before finalizing procurement orders.

Selection Notes

Select this component when a PNP transistor with 1.5 A continuous current capability and 80 V breakdown voltage is required. The TO-126-3 package provides adequate thermal management for moderate power dissipation. Verify that the hFE gain range meets the base drive requirements of the target circuit design.

Part Context

This part belongs to the BD140 series of PNP transistors designed for general-purpose power switching. It complements NPN counterparts like the BD139 series within the same product family. The TO-126-3 package allows for easy integration into standard printed circuit board layouts requiring through-hole technology.

Replacement Considerations

Consult the official datasheet for direct pin-compatible substitutes within the BD140 series. Verify that any alternative part maintains identical voltage ratings and current capabilities to ensure circuit compatibility.