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The BD237G is an NPN plastic medium power bipolar junction transistor manufactured by onsemi. It features a collector-emitter sustaining voltage of 80 Vdc and a collector-base voltage of 100 Vdc. The device supports a continuous collector current of 2.0 Adc with a total device dissipation of 25 W at 25°C case temperature. Electrical characteristics include a minimum DC current gain of 40 at 0.15 Adc and 25 at 1.0 Adc, both measured at 2.0 Vce. The transition frequency is specified at 3.0 MHz under standard test conditions.
Verify the specific ordering suffix to confirm package type and compliance status. Check the manufacturer's official documentation for current production status, as some variants may be discontinued. Confirm thermal resistance values match the intended mounting method and heat sink requirements before finalizing procurement specifications.
Select this component for applications requiring medium power handling within audio signal paths. Ensure the operating junction temperature remains within the specified -55°C to +150°C range. Verify that the required DC current gain meets the minimum thresholds defined in the electrical characteristics table for the specific load current conditions.
This device belongs to the BD237 series of plastic medium power bipolar transistors produced by onsemi. The series includes complementary PNP counterparts such as the BD234G. These components are engineered specifically for medium-power audio applications where high current gain and reliable thermal performance are necessary for stable operation in amplifier stages.
Consult the manufacturer's discontinuation notice for alternative recommendations if the BD237G is no longer recommended for new designs. Verify pinout compatibility and electrical parameters when considering cross-references from other manufacturers.