BD238

Description：TRANS PNP 80V 2A TO-126
Series：-

SKU:80f570d61f32 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 80V 2A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：25 W
Frequency - Transition：3MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD238

Overview

The BD238G is a PNP silicon power transistor manufactured by onsemi in the TO-225 (TO-126) package. It features a maximum collector current of 2.0 A and a collector-emitter voltage rating of 80 Vdc. The device provides a total device dissipation of 25 W at 25°C case temperature, with a thermal resistance junction-to-case of 5.0 °C/W. Electrical characteristics include a minimum DC current gain of 25 at 1.0 A and a maximum collector-emitter saturation voltage of 0.6 V.

Feature Summary

Designed for high DC current gain performance
Epoxy casing meets UL 94 V0 flammability standards
Complementary pairing available with BD237G

Applications

Audio amplifiers
Quasi-complementary circuits
Driver stages

Procurement Notes

Verify component status before procurement as some variants are discontinued. Confirm lead-free compliance and RoHS adherence against specific ordering suffixes. Validate pinout configurations for TO-225 packages to ensure correct mounting style compatibility with existing board layouts.

Selection Notes

Select this component for medium-power applications requiring robust current handling up to 2.0 A. Ensure thermal management strategies account for the 25 W dissipation limit. Verify that the 80 V collector-emitter voltage rating exceeds the circuit's peak operating requirements to maintain reliability under transient conditions.

Part Context

This part belongs to the BD23x series of plastic medium power bipolar transistors. It serves as the PNP counterpart to the NPN BD237G within complementary pairs. The series is engineered for linear and switching applications where moderate power levels and high gain are required.