BD238S

Overview

The BD238S is a PNP silicon power transistor manufactured by onsemi using planar technology with a Base Island layout. It serves as the complementary device to the BD235 NPN transistor. The component is characterized by high current gain and low saturation voltage, designed for robust performance in power switching applications.

Feature Summary

• High DC current gain performance
• Low collector-emitter saturation voltage
• Planar construction with Base Island layout

Applications

• Power switching circuits
• Complementary amplifier stages
• General-purpose power amplification

Procurement Notes

Verify the specific suffix 'S' against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Ensure the part number matches the exact revision required for your design, as manufacturing updates may alter physical dimensions or testing parameters without changing the base model name.

Selection Notes

Select this component when a PNP counterpart to the BD235 is required. The Base Island layout provides thermal stability advantages. Verify that the application demands align with the device's power dissipation limits and saturation characteristics compared to alternative discrete transistors.

Part Context

This device belongs to the BD23x series of complementary silicon power transistors. It is engineered to pair with the BD235 (NPN) to form matched pairs for push-pull configurations. The series utilizes planar technology to ensure consistent electrical characteristics across production batches.

Replacement Considerations

The BD236 is the NPN complement within the same family. Direct substitutes require matching pinout, voltage ratings, and current capabilities. Verify thermal resistance values if replacing in high-power applications.