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The onsemi BD240CTU is a PNP epitaxial silicon bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 100 V DC and a maximum collector-base voltage (VCBO) of 100 V DC. The device supports a continuous collector current of 2 A and dissipates up to 65 W of power. Operating within a temperature range of -65°C to +150°C, it utilizes a TO-220-3 through-hole package with three pins.
Verify the specific manufacturer designation when sourcing, as historical data references Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the component matches the required PNP polarity and TO-220-3 physical dimensions. Ensure compatibility with existing thermal management solutions given the 65 W power rating. Cross-reference datasheet revisions to confirm electrical parameters align with current design requirements.
Select this component for designs requiring a high-voltage PNP switch with moderate current handling capabilities. The TO-220-3 package facilitates efficient heat transfer to external heatsinks. Consider the 100 V breakdown voltage limits when designing for inductive load protection. Evaluate thermal resistance characteristics to ensure safe operation within the specified junction temperature range during continuous duty cycles.
The BD240CTU belongs to the BD240C series of general-purpose and low saturation voltage transistors. This family is engineered for reliable operation in standard electronic environments. The device represents a legacy product line originally developed by Fairchild Semiconductor, now maintained under the onsemi portfolio for continued availability in industrial and consumer electronics markets.
Public confirmed substitute part numbers are not available in the provided documentation.