BD241BTU

Overview

The BD241BTU is an NPN epitaxial planar silicon power transistor manufactured by onsemi. It is housed in a TO-220AB flange mount package designed for high-power applications. The device features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) rating of 3 A. It utilizes a 'Base Island' layout to achieve high gain performance and low saturation voltage, making it suitable for audio amplifiers and general-purpose switching circuits.

Feature Summary

• Manufactured using epitaxial planar silicon technology with a specialized base island layout
• Designed for high gain performance combined with very low saturation voltage characteristics
• Constructed as a single NPN configuration within a robust TO-220AB flange mount package

Applications

• Audio amplifier output stages
• General-purpose power switching applications
• Linear regulator circuits

Procurement Notes

Verify the manufacturer marking and date code against official onsemi documentation to ensure authenticity. Confirm that the TO-220AB package matches the required thermal management specifications for your design. Check for RoHS compliance status if environmental regulations apply to your specific deployment scenario.

Selection Notes

Select this component when an NPN power transistor with an 80 V collector-emitter breakdown voltage and 3 A continuous current capability is required. The TO-220AB package provides effective heat dissipation for moderate power levels. Ensure the application benefits from the low saturation voltage and high gain characteristics inherent to the base island technology.

Part Context

The BD241BTU belongs to the BD241 series of complementary silicon power transistors produced by onsemi. This series includes PNP counterparts such as the BD242A and BD242C. These devices are engineered for use in push-pull configurations within audio and power supply circuits, leveraging planar technology for reliable high-current operation.