BD241CTU

Overview

The BD241CTU is an NPN silicon power transistor manufactured by Fairchild Semiconductor. It utilizes planar technology with a base island layout to achieve high gain and low saturation voltage. The device is housed in a TO-220 package and supports a collector-emitter voltage of 80 V and a continuous collector current of 3 A.

Feature Summary

• Planar technology construction with base island layout
• High DC current gain performance
• Low saturation voltage characteristics

Applications

• Power amplifier circuits
• Switching applications
• Audio output stages

Procurement Notes

Verify the manufacturer origin, as STMicroelectronics acquired Fairchild's discrete semiconductor business. Confirm the specific suffix 'TU' corresponds to the intended packaging variant. Ensure compliance with RoHS directives if required for the target application environment.

Selection Notes

Select this component for designs requiring moderate power handling with high gain. Compare against complementary PNP types like the BD242C for push-pull configurations. Evaluate thermal management requirements based on the TO-220 package dissipation capabilities.

Part Context

This part belongs to the BD241 series of complementary silicon power transistors. The series includes variants such as BD241A and BD241B, differentiated primarily by their DC current gain (hFE) ranges. The BD241CTU represents a specific gain bin within this family.

Replacement Considerations

Direct substitutes include BD241A or BD241B depending on required gain specifications. Complementary operation requires the BD242C PNP transistor.