BD243A

Overview

The onsemi BD243A is an NPN epitaxial silicon power transistor housed in a TO-220 package. It features a collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V. The device supports a continuous DC collector current of 6 A and a peak pulsed collector current of 10 A. Maximum collector dissipation is rated at 65 W at a case temperature of 25°C. The junction temperature range spans from -65°C to +150°C, with a minimum DC current gain (hFE) of 30 at IC = 0.3 A.

Feature Summary

• Designed for medium power linear and switching applications
• Complements the BD244A PNP transistor
• Utilizes NPN epitaxial silicon construction

Applications

• General purpose amplifier circuits
• Power switching applications
• Linear regulation stages

Procurement Notes

Verify the specific manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm RoHS compliance status for the specific production lot, as older datasheets may not reflect current environmental declarations. Ensure the TO-220 package variant matches your thermal management requirements and mounting constraints.

Selection Notes

Select this component when a 60 V breakdown voltage is required alongside high current handling capabilities. Compare against BD243B or BD243C if higher voltage ratings are needed. Ensure adequate heat sinking is provided to maintain case temperatures within limits for the specified 65 W dissipation rating.

Part Context

This part belongs to the BD243/A/B/C series of complementary silicon plastic power transistors. The 'A' suffix specifically denotes the 60 V rating tier, distinguishing it from the 45 V (BD243), 80 V (BD243B), and 100 V (BD243C) variants within the same family.

Replacement Considerations

The BD244A is the designated complementary PNP counterpart. Other manufacturers producing equivalent 6A/60V NPN TO-220 transistors may serve as functional replacements if pinouts and electrical characteristics align.