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The onsemi BD243BTU is an NPN epitaxial silicon power transistor housed in a TO-220AB through-hole package. It supports a maximum DC collector current of 6 A and withstands a collector-emitter voltage (VCEO) of 80 V, with a collector-base voltage (VCBO) of 100 V. The device features a minimum DC current gain (hFE) of 15 and a transition frequency (fT) of 1 MHz. Maximum power dissipation is rated at 65 W at 25°C case temperature, operating within a junction temperature range of -65°C to +150°C.
Verify the specific suffix 'BTU' against official datasheets to confirm exact packaging and tape-and-reel specifications. Ensure the component matches the required 80 V rating rather than other variants in the family. Confirm RoHS compliance status directly from the manufacturer's documentation before integration into regulated designs.
Select this component when an NPN power transistor with 80 V breakdown and 6 A continuous current capability is required. The integrated base resistor simplifies interface logic. Compare against BD243C if higher voltage ratings are needed. Verify thermal requirements align with the 65 W dissipation limit under actual operating conditions.
This part belongs to the BD243/B/C series of medium-power NPN transistors. It serves as the complementary counterpart to the BD244 series PNP devices. The series is designed for general-purpose linear and switching applications in audio and power supply circuits.
BD243B is a direct electrical equivalent within the same voltage class. BD243CG offers higher voltage ratings but requires verification of pinout and package compatibility.