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The BD244ATU is a silicon PNP power transistor manufactured by onsemi, designed for medium-power linear and switching applications. It utilizes the TO-220 package with an isolated mounting base. The device features a collector-base voltage (VCBO) of 80 V DC and a collector-emitter voltage (VCEO) of 60 V DC. It supports a maximum continuous DC collector current of 6 A and a peak collector current of 12 A. The component operates within a junction temperature range of -65°C to +150°C, with a maximum power dissipation of 65 W at 25°C case temperature.
Verify the specific suffix TU against official datasheets to confirm tape-and-reel packaging versus bulk availability. Confirm RoHS compliance status as manufacturing processes evolve. Ensure thermal management requirements align with the 65W dissipation rating when operating near maximum limits.
Select this component for designs requiring a PNP counterpart to the BD243C NPN transistor. Evaluate thermal resistance characteristics for heat sink sizing. Verify that the 60V collector-emitter voltage rating exceeds the circuit's maximum operating voltage under all transient conditions.
This part belongs to the BD244 family of silicon PNP power transistors. It serves as the complementary device to the BD243 series NPN transistors. The family is engineered for medium-power applications requiring high current handling capabilities and reliable switching performance in industrial and consumer electronics.
Official substitutes include BD244B and BD244C variants within the same product line. Cross-reference electrical parameters such as VCBO and VCEO ratings before substituting with generic equivalents.