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Product Detailed Parameters
- Description：TRANS PNP 100V 6A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：6:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1A, 6A
- Current - Collector Cutoff (Max)：700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 3A, 4V
- Power - Max：65 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The BD244C is a PNP epitaxial silicon power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 100 V and a continuous collector current (IC) of 6 A. The device supports a peak collector current of 10 A and offers a maximum power dissipation of 65 W at a case temperature of 25°C. It operates within a junction temperature range of -65°C to +150°C. The component utilizes a TO-220 package with the collector connected to the mounting base.
Feature Summary
- Complements the BD243C NPN transistor for push-pull configurations
- Designed for medium power linear and switching applications
- Features high current gain bandwidth product
Applications
- Medium power linear amplifier circuits
- General purpose switching applications
- Push-pull output stages using complementary BD243C devices
Procurement Notes
Verify the specific suffix 'C' to confirm the 100 V rating, as other variants in the BD244 series have lower voltage ratings. Confirm availability status, as this component may be subject to discontinuation or lifecycle changes. Ensure the ordering part number matches the updated nomenclature standards following the Fairchild Semiconductor integration into ON Semiconductor.
Selection Notes
Select the BD244C when a 100 V breakdown voltage is required for PNP power switching or amplification. Compare against BD244B (80 V) or BD244A (60 V) if lower voltage ratings suffice. Ensure thermal management allows for 65 W dissipation at 25°C case temperature, utilizing the TO-220 flange for heat sinking.
Part Context
The BD244C belongs to the BD244/A/B/C family of PNP Epitaxial Silicon Transistors. This family serves as the complementary counterpart to the BD243 series of NPN transistors. Originally developed by Fairchild Semiconductor, these components are now managed under the ON Semiconductor portfolio following corporate integration.
Replacement Considerations
BD244B
FAQ
What is the collector-emitter sustaining voltage for the BD244C?
The collector-emitter sustaining voltage (VCEO(sus)) for the BD244C is 100 V, measured at IC = -30mA and IB = 0.
How does the BD244C connect to the mounting base?
In the TO-220 package, the collector terminal is electrically connected to the mounting base.
What is the minimum DC current gain (hFE) for the BD244C?
The minimum DC current gain (hFE) is 30 at IC = -0.3A and VCE = -4V, and 15 at IC = -3A and VCE = -4V.
