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The BD37716STU is an NPN silicon epitaxial planar transistor manufactured by onsemi, housed in a TO-126-3 (TO-225AA) through-hole package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1.5 A. The device provides a DC current gain range from 40 to 160. Thermal performance includes a power dissipation capacity of 1.25 W at 25°C ambient temperature. The component operates within a junction temperature range of -65°C to +150°C.
Verify the specific suffix 'STU' corresponds to the required tape-and-reel or tube packaging format, as variations exist within the family. Confirm RoHS compliance status via the manufacturer's official material composition documents prior to integration into environmentally restricted assemblies.
Select this component when a 60 V NPN transistor with 1.5 A continuous current capacity is required. Ensure the thermal management design supports the 1.25 W dissipation limit. Compare against alternatives if higher voltage ratings or different package footprints are necessary for the specific application constraints.
This part belongs to the BD137/BD37 series of medium-power NPN transistors. These devices are designed for general-purpose applications requiring reliable switching and amplification. The series offers standardized pinouts and electrical characteristics suitable for widespread industrial and consumer electronics use cases.
The BD13716STU is a documented equivalent within the same product family. Verify that substitute parts match the 60 V rating and 1.5 A current specifications to ensure functional compatibility without redesigning the circuit board layout.