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The onsemi BD441 is a PNP silicon bipolar junction transistor (BJT) designed for medium-power applications. It features a maximum DC collector current of 4 A and a collector-emitter voltage rating of 80 V. The device offers a power dissipation capacity of 36 W at 25°C, with a gain-bandwidth product of 3 MHz. It operates within a temperature range of -55°C to +150°C and is housed in a TO-225AB (TO-220) through-hole package.
Verify the specific suffix code against the manufacturer datasheet to confirm exact electrical tolerances and packaging options. Ensure the procurement source provides valid RoHS compliance documentation. Confirm that the component matches the required TO-225AB package dimensions for PCB integration.
Select this component when a PNP configuration is required for high-current loads up to 4 A. Compare the 80 V breakdown voltage against circuit requirements. Consider the thermal resistance characteristics if heatsinking is necessary for continuous operation near the 36 W limit.
The BD441 belongs to the BD4xx series of complementary PNP transistors, often paired with NPN counterparts like the BD439. This family is widely used in linear and switching applications requiring reliable medium-power performance from a single discrete component.
Check for direct cross-reference part numbers such as the BD441G or equivalent PNP devices with matching 4A/80V ratings. Verify pinout compatibility and thermal pad specifications before substitution.