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The BD442G is a plastic, medium-power silicon PNP transistor manufactured by onsemi. It operates with a collector-emitter voltage of 80 V and supports a continuous collector current of 4 A. The device dissipates up to 36 W at 25°C case temperature. Key electrical parameters include a DC current gain (hFE) minimum of 15 at 2 A, a saturation voltage of 0.8 V at 3 A, and a transition frequency of 3 MHz. It functions within a junction temperature range of -55°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status and compliance documentation prior to integration. Ensure thermal management aligns with specified derating curves. Validate pinout compatibility with existing PCB layouts. Review discontinuation notices for long-term supply assurance.
Select this component for designs requiring 80 V breakdown and 4 A current handling in a TO-225 package. Consider complementary NPN variants for push-pull configurations. Evaluate thermal resistance requirements against system dissipation limits. Verify operating temperature ranges match environmental constraints.
This part belongs to the BD4xx series of plastic medium-power silicon PNP transistors from onsemi. The series includes BD436G, BD438G, BD440G, and BD442G, differentiated primarily by their collector-emitter voltage ratings. These devices share similar packaging and thermal characteristics.
BD442STU is an alternative package variant within the same series. Verify pinout and thermal performance equivalence before substitution.
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
No, these devices are not recommended for new design according to the datasheet.
The minimum DC current gain (hFE) at IC = 2.0 A and VCE = 1.0 V is 15.