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The BD536 is a PNP power transistor manufactured by STMicroelectronics using Planar technology with a Base Island layout. It provides an 8 A collector current and a 60 V collector-emitter voltage rating. The device dissipates up to 50 W of power at a case temperature of 25°C. It features a maximum operating junction temperature of 150°C and a storage temperature range from -65°C to 150°C. The component is housed in a TO-220 package.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details, as standard tubes are indicated but variations may exist. Confirm RoHS compliance status through the latest datasheet revision or environmental declaration. Ensure the component meets the required thermal dissipation specifications for your application environment.
Select this component when a PNP configuration is required for medium power handling. The BD536 serves as the complementary pair to the BD535 NPN transistor. Consider the TO-220 package constraints and the need for adequate heat sinking to manage the 50 W total dissipation capability effectively under operational conditions.
The BD536 belongs to a family of complementary silicon power transistors that includes the BD533, BD534, BD535, and BD537 models. These devices share similar manufacturing technologies and are intended for comparable medium power applications. The series offers both NPN and PNP options to facilitate push-pull circuit designs.
The BD535 is the direct complementary NPN counterpart within the same product family.