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The BD675AS is a single NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 45 V and a maximum emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of 4 A with a power dissipation rating of 40 W. Key electrical characteristics include a minimum DC current gain (hFE) of 750 and a maximum collector cutoff current of 200 uA. It is housed in a TO-126 through-hole package, suitable for operation up to a maximum junction temperature of +150°C.
Verify component authenticity and datasheet alignment when sourcing this part. Confirm the specific suffix designation matches design requirements. Check for end-of-life status or alternative availability from authorized distributors. Ensure compliance with relevant environmental regulations such as RoHS before integration into final assemblies.
Select this component for applications requiring high current gain and moderate voltage handling. The TO-126 package facilitates heat sinking for high-power operations. Consider the 4 A current limit and 45 V voltage rating when designing circuit protection. Evaluate thermal management strategies given the 40 W dissipation capability.
This component belongs to the BD675A series of NPN Darlington transistors. It is designed for general-purpose power switching and amplification tasks. The epitaxial silicon construction ensures reliable performance under varying load conditions. The single-transistor configuration simplifies circuit layout compared to discrete multi-transistor solutions.
Public confirmed substitute part numbers are not available in verified documentation.